IRF630 DATASHEET PDF

February 13, 2020   |   by admin

Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.

Author: Nakinos Fenrisar
Country: Latvia
Language: English (Spanish)
Genre: Relationship
Published (Last): 14 September 2004
Pages: 310
PDF File Size: 6.90 Mb
ePub File Size: 12.59 Mb
ISBN: 541-3-86432-288-6
Downloads: 28879
Price: Free* [*Free Regsitration Required]
Uploader: Gardazuru

Elcodis is a trademark of Elcodis Company Ltd. Copy your embed code and put on your site: L S die contact.

This datasheet is subject to change without notice. I SM p – n junction diode.

IRF630 Datasheet

The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Zero Gate Voltage Drain Current.

The low thermal resistance. Drain-Source Body Diode Characteristics. Contents Contents 1 Electrical ratings. Gate charge test circuit Figure View PDF for Mobile. The TOAB package is universally preferred for all. Case-to-Sink, Flat, Greased Surface.

  ERA 81-004 PDF

Unclamped Inductive load test circuit Figure Operating Junction and Storage Temperature Range. Gate charge vs gate-source voltage Figure Prev Next General features. Unclamped inductive waveform Figure Single Pulse Avalanche Energy b.

Thermal impedance for TO Figure 4. All other trademarks are the property of their respective owners. Safe operating area for TO Figure 3. Pulsed Diode Forward Current a.

PDF IRF630 Datasheet ( Hoja de datos )

Vishay Intertechnology Electronic Components Datasheet. Body Diode Reverse Recovery Charge. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8.

Pulse width limited by safe operating area 2. Pulsed Drain Current a.

Repetitive rating; pulse width limited by maximum junction temperature see fig. IRF datasheet and specification datasheet. The low thermal resistance and low package cost of the TOAB dataxheet to its wide acceptance throughout the industry. Repetitive Avalanche Current a. N-channel V – 0. V DS Temperature Coefficient. Switching times test circuit for resistive load Figure Capacitance variations Figure These packages have a Lead-free second level interconnect.

  GIEDION SPAZIO TEMPO ARCHITETTURA PDF

IRF datasheet and specification datasheet Download datasheet. Body Diode Reverse Recovery Time. Static drain-source on resistance Figure Electrical characteristics Figure Continuous Source-Drain Diode Current.

STMicroelectronics IRF – PDF Datasheet – MOSFET In Stock |

Download datasheet Kb Share this page. Repetitive Avalanche Energy a. Test circuit for inductive load switching and diode recovery times Figure The maximum ratings related to soldering conditions are also marked on the inner box label. Soldering Recommendations Peak Temperature.